| RF 전력 증폭기의 온도 변화에 따른 Drain 전류변동 억제를 위한 능동 바이어스 회로의 구현 및 특성 측정 |
|
조희제, 전중성, 심준환, 강인호, 예병덕, 홍창희 |
|
|
| The RF Power Amplifier Using Active Biasing Circuit for Suppression Drain Current under Variation Temperatur |
|
Hee-Jea Cho, Joong-Sung Jeon, Jun-Hwan Sim, In-Ho Kang, Byeong-Duck Ye, Tchang-Hee Hong |
|
|
| Abstract |
|
In this paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF-21060 power amplifier.
The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1 A. whereas passive biasing circuit dissipate more than 0.5 A. The implemented power amplifier has the gain over 12 ㏈, the gain flatness of less than ±0.09 ㏈ and input and output return loss of less than -19 ㏈ over the frequency range 2.11 ~ 2.17 ㎓. The DC operation point of this power amplifier at temperature variation from 0 ℃ to 60 ℃ is fixed by active bias circuit. |
| Key Words:
Active Biasing Circuit;RF Power Amplifier;Parallel Power Amplifier;LDMOS |
|
PDF Links
Download Citation
